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add support for M27C256
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@ -35,6 +35,7 @@ class PromDevice
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virtual ERET disableSoftwareWriteProtect() { return RET_NOT_SUPPORT; }
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virtual ERET enableSoftwareWriteProtect() { return RET_NOT_SUPPORT; }
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virtual ERET erase(uint32_t start, uint32_t end) { return RET_NOT_SUPPORT; }
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virtual bool is_readback_safe() { return true; }
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uint32_t debugBlockWrites; // Number of block write operations
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uint32_t debugLastAddress; // Last address with an issue
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@ -17,10 +17,11 @@
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* 27 or 27C series parallel EPROM using the Arduino. Supported chips
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* include 2716, 2732, 2764, 27C040, and 27C2001.
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*
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* Intelligent programming algorithms, like TurboProgram, are supported.
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* These allow a variable number of shorter program pulses until the byte
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* verifies. This is optionally followed by an overprogram pulse that is
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* a multiple of the number of program pulses that were written.
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* Intelligent programming algorithms, like TurboProgram and Presto II, are supported.
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* These allow a variable number of shorter program pulses until the byte verifies. This
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* is optionally followed by an overprogram pulse that is a multiple of the number of
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* program pulses that were written.
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*
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*
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* See the constructor definition for an explanation of the parameters that
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* control programming.
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@ -40,6 +41,7 @@ class PromDevice27 : public PromDevice
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void begin();
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const char * getName() { return "27 series EPROM"; }
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ERET erase(uint32_t start, uint32_t end);
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bool is_readback_safe() { return mPgmType != E27C_PGM_CE; }
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protected:
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void setAddress(uint32_t address);
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@ -47,11 +47,12 @@ PromDevice28C prom(32 * 1024L, 64, 10, true);
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// (true) verify data byte after writing
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//PromDevice27 prom(8 * 1024L, E27C_PGM_WE, 1000L, 15, 4); // 2764 with SEEQ intelligent programming
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//PromDevice27 prom(32 * 1024L, E27C_PGM_WE, 1000L, 25, 3); // 27C256 with SEEQ intelligent programming
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PromDevice27 prom(32 * 1024L, E27C_PGM_CE, 100L, 25, 0); // M27C256 with Presto II intelligent programming
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//PromDevice27 prom(2 * 1024L, E27C_PGM_WE, 50000L, 1, 0); // 2716 with single 50ms write
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//PromDevice27 prom(512 * 1024L, E27C_PGM_CE, 100L, 11, 0); // 27C040 with Atmel rapid programming, CE connected to CE#/PGM#
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//PromDevice27 prom(32 * 1024L, E27C_PGM_CE, 100L, 25, 0); // W27C257/W27E257 with 100uS program pulse on CE
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//PromDevice27 prom(64 * 1024L, E27C_PGM_CE, 100L, 1, 0, false); // W27C512 with single 100uS program pulse on CE, no verify
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PromDevice27 prom(256 * 1024L, E27C_PGM_WE, 20L, 1, 0, false); // SST27SF020 with single 20us write, no verify
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//PromDevice27 prom(256 * 1024L, E27C_PGM_WE, 20L, 1, 0, false); // SST27SF020 with single 20us write, no verify
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#elif defined(PROM_IS_SST39SF)
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// Define a device for anSST39SF Flash with the following parameters:
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@ -491,6 +492,13 @@ void pokeBytes(char * pCursor)
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}
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delay(100);
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if (!prom.is_readback_safe()) {
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// This chip uses the CE line for write control, so don't do the read because it
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// could cause a write operation that would corrupt the data.
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cmdStatus.info("Poke complete");
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return;
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}
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for (unsigned ix = 0; ix < byteCtr ; ix++)
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{
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byte val = prom.readData(start + ix);
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@ -621,6 +629,14 @@ void zapTest(uint32_t start)
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}
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delay(100);
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if (!prom.is_readback_safe()) {
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// This chip uses the CE line for write control, so don't do the read because it
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// could cause a write operation that would corrupt the data.
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cmdStatus.info("Write test complete");
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return;
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}
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for (unsigned ix = 0; ix < sizeof(testData); ix++)
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{
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byte val = prom.readData(start + ix);
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@ -37,8 +37,9 @@ different chip technologies.
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|AT29C010 |Atmel |Flash |28C |Only with 128 byte or less sector size|
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|SST39SF040|Microchip |Flash |SST39SF|All SST39SF0x0 supported|
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|SST28SF040|SST |Flash |SST28SF|All SST28SF0x0 supported|
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|SST27SF020|SST |Flash |27 |12V continuous for pgm/erase|
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|M27C256 |ST Micro |EPROM | |VCC=6.5V, VPP=12.75V to pgm|
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|W27C257 |Winbond |EEPROM |27 |Continuous 12V or 14V for program/erase|
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|SST27SF020|SST |Flash |27 |12V continuous for pgm/erase|
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|8755A |Intel |EPROM |8755A |Requires 25V pulses to program|
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@ -101,7 +102,8 @@ hardware](pcb#TommyPROM32) for a diode circuit that allows the programming volta
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switched between Vcc and a higher voltage.
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Check the [Chip Details](#27c-and-27e-series-eproms-and-flash) for the high voltage
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connections for a particular chip or consult your data sheet.
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connections for a particular chip or consult your data sheet. Also note the warning in
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that section about issuing other commands while the programming voltage is asserted.
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Chips that use high voltage pulses for each byte are not supported. For those chips, some
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elements of the [8755A hardware](8755A-hardware) may be leveraged to build a version of
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@ -119,7 +121,8 @@ contains a 2KB EPROM plus two general-purpose I/O ports. The 8355 is a one-time
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programmable version of the 8755. The 8755 requires a 25V programming pulse for each byte
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to be written.
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A new hardware build was created to support the 8755 chips. Because the 8755 has a multiplexed data and address bus, the usual shift registers are not used for addressing.
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A new hardware build was created to support the 8755 chips. Because the 8755 has a
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multiplexed data and address bus, the usual shift registers are not used for addressing.
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The chip only needs 8 connects that are shared for address and data, plus three dedicated
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address lines. The Arduino has enough pins to drive all of these directly, without the
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need for shift registers to create address lines.
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@ -160,6 +163,32 @@ used to enable and disable SDP from the command line.
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## 27C and 27E Series EPROMs and Flash
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*WARNING*: Some chips in this series use the _CE_ and _OE_ pins in non-standard ways when
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the high voltage is asserted on _VPP_. Because the programming voltage is switched
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manually, care needs to be taken when using chips that pulse the _CE_ pin for
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programming. The programming code itself knows how to manage this, but other commands,
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like the DUMP command, will also toggle _CE_. If the programming voltage is asserted,
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these other commands can inadvertently cause a write operation. Be sure to assert the
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programming voltage, issue the needed write commands, and then remove the high voltage
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before issuing and additional commands that may corrupt the data.
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### M27C256
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The M27C256 is a 32Kx8 byte UV-erasable EPROM. It needs two special voltages for
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programming. _VPP_ must be raised to 12.75V and _VCC_ must be raised to 6.25V. Be sure
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to isolate the chip's _VCC_ pin from other Vcc connections so that the 6.25V is not fed
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back into the Adbuino or into the shift registers.
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This chip does not have a dedicated _PGM_ or _WE_ pin, so programming and verify are
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controlled by the _E_ (Chip Enable) and _G_ (Output Enable) pins. The _CE_ pin is pulsed
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to program bytes into a location. To verify, the _OE_ pin is asserted, but the _CE_ pin
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is not.
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Note the warning in the section above about data corruption from issuing other commands
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while the programming voltages are present.
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This chip can only be erased with UV light, so the erase command is not supported.
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### W27C257 and W27C512
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The Winbond W27C257 and W27E257 appear to be identical 32Kx8 EEPROMs. The 27C version
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@ -168,11 +197,12 @@ has been tested. The Winbond W27C512 is a 64Kx8 EEPROM with no dedicated _VPP_
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The 257 EEPROMs have a _VPP_ pin that needs a constant 12V during programming. Unlike the
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newer 28C EEPROMs, these chips do not automatically erase before writing to a location.
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Instead, the entire chip is erased by applying 14V to _VPP_ and _A9_ and then pulsing
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_CE_.
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_CE_. To erase the chip, assert the voltages on _VPP_ and _A9_ and then issue the
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_Erase_ command from the terminal.
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Unlike the 257 chips, the W27C512 does not have a dedicated pin for the programming
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voltage and instead uses the OE pin to place the chip in programming mode. The verify
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operation requires that the OE pin be switched to _LOW_ and there is no hardware support
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voltage and instead uses the _OE_ pin to place the chip in programming mode. The verify
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operation requires that the _OE_ pin be switched to _LOW_ and there is no hardware support
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for this, so the current code supports the 512 chip by doing a single write cycle with no
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verify.
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@ -257,8 +287,9 @@ pulsing _WE_.
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|AMS - Advanced Memory Systems|AMS |Merged with Intersil|
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|AMD - Advanced Micro Devices |AM ||
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|Atmel |AT |Aquired by Microchip|
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|CSI - Catalyst Semiconductor |CAT |Purchased by ON Semiconductor|
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|CSI - Catalyst Semiconductor |CAT |Aquired by ON Semiconductor|
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|Intel |i ||
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|Seeq Technology | |Aquired by LSI Logic|
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|SST - Silicon Storage Tech |ST |Aquired by Microchip|
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|ST Microelectronics |M ||
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|Winbond |W ||
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