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add M27256 to docs

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Tom Nisbet 2024-05-04 11:43:53 -04:00
parent 18bb15bec6
commit af46f2686c
3 changed files with 11 additions and 6 deletions
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6
TommyPROM/TommyPROM.ino
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@ -41,10 +41,10 @@ PromDevice28C prom(32 * 1024L, 64, 10, true);
#elif defined(PROM_IS_27) #elif defined(PROM_IS_27)
// Define a device for a 2764 EPROM with the following parameters: // Define a device for a 2764 EPROM with the following parameters:
// 8K byte device capacity // 8K byte device capacity
// PGM pin pulses active LOW // Program using dedicated WR pin
// 1000us (1ms) write pulse // 1000us (1ms) write pulse
// 15 write attempts // Max 15 write attempts
// 4x overwrite pulse // 4x overwrite pulse (4 * writePulseLength * numberOfPulsesWritten)
// (true) verify data byte after writing // (true) verify data byte after writing
//PromDevice27 prom(8 * 1024L, E27C_PGM_WE, 1000L, 15, 4); // 2764 with SEEQ intelligent programming //PromDevice27 prom(8 * 1024L, E27C_PGM_WE, 1000L, 15, 4); // 2764 with SEEQ intelligent programming
//PromDevice27 prom(32 * 1024L, E27C_PGM_WE, 1000L, 25, 3); // 27C256 with SEEQ intelligent programming //PromDevice27 prom(32 * 1024L, E27C_PGM_WE, 1000L, 25, 3); // 27C256 with SEEQ intelligent programming

5
docs/_docs/design-250-prom-specific-code.md
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@ -37,6 +37,7 @@ different chip technologies.
|AT29C010 |Atmel |Flash |28C |Only with 128 byte or less sector size| |AT29C010 |Atmel |Flash |28C |Only with 128 byte or less sector size|
|SST39SF040|Microchip |Flash |SST39SF|All SST39SF0x0 supported| |SST39SF040|Microchip |Flash |SST39SF|All SST39SF0x0 supported|
|SST28SF040|SST |Flash |SST28SF|All SST28SF0x0 supported| |SST28SF040|SST |Flash |SST28SF|All SST28SF0x0 supported|
|M27256 |ST Micro |EPROM |27 |VCC=6V, VPP=12.5V to pgm|
|M27C256 |ST Micro |EPROM |27 |VCC=6.5V, VPP=12.75V to pgm| |M27C256 |ST Micro |EPROM |27 |VCC=6.5V, VPP=12.75V to pgm|
|W27C257 |Winbond |EEPROM |27 |Continuous 12V or 14V for program/erase| |W27C257 |Winbond |EEPROM |27 |Continuous 12V or 14V for program/erase|
|SST27SF020|SST |Flash |27 |12V continuous for pgm/erase| |SST27SF020|SST |Flash |27 |12V continuous for pgm/erase|
@ -213,6 +214,10 @@ while the programming voltages are present.
This chip can only be erased with UV light, so the erase command is not supported. This chip can only be erased with UV light, so the erase command is not supported.
### M27256
This is an older version of the M27C256. Pin connections are the same, but for programming Vcc=6V and Vpp=12.5V. The programming pulse width is 1ms instead of 100us, and the programming algorithm uses an overwrite pulse equal to 3ms * the number of program pulses written.
### W27C257 and W27C512 ### W27C257 and W27C512
The Winbond W27C257 and W27E257 appear to be identical 32Kx8 EEPROMs. The 27C version The Winbond W27C257 and W27E257 appear to be identical 32Kx8 EEPROMs. The 27C version

6
schematics/Adapters/card-edge/card-edge-32.kicad_pcb
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@ -17,8 +17,8 @@
(33 F.Adhes user hide) (33 F.Adhes user hide)
(34 B.Paste user hide) (34 B.Paste user hide)
(35 F.Paste user hide) (35 F.Paste user hide)
(36 B.SilkS user) (36 B.SilkS user hide)
(37 F.SilkS user) (37 F.SilkS user hide)
(38 B.Mask user hide) (38 B.Mask user hide)
(39 F.Mask user hide) (39 F.Mask user hide)
(40 Dwgs.User user hide) (40 Dwgs.User user hide)
@ -86,7 +86,7 @@
(mirror false) (mirror false)
(drillshape 0) (drillshape 0)
(scaleselection 1) (scaleselection 1)
(outputdirectory "./edge-card-32")) (outputdirectory "./edge-card-32v2"))
) )
(net 0 "") (net 0 "")