The theory is it's still faster than a pair of movq / a quad of movl. This
will probably hurt older chips like P4 but should run faster on current
and future Intel processors. rdar://8817010
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1. Makes it possible to lower with floating point loads and stores.
2. Avoid unaligned loads / stores unless it's fast.
3. Fix some memcpy lowering logic bug related to when to optimize a
load from constant string into a constant.
4. Adjust x86 memcpy lowering threshold to make it more sane.
5. Fix x86 target hook so it uses vector and floating point memory
ops more effectively.
rdar://7774704
git-svn-id: https://llvm.org/svn/llvm-project/llvm/trunk@100090 91177308-0d34-0410-b5e6-96231b3b80d8
integer and floating-point opcodes, introducing
FAdd, FSub, and FMul.
For now, the AsmParser, BitcodeReader, and IRBuilder all preserve
backwards compatability, and the Core LLVM APIs preserve backwards
compatibility for IR producers. Most front-ends won't need to change
immediately.
This implements the first step of the plan outlined here:
http://nondot.org/sabre/LLVMNotes/IntegerOverflow.txt
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on any current target and aren't optimized in DAGCombiner. Instead
of using intermediate nodes, expand the operations, choosing between
simple loads/stores, target-specific code, and library calls,
immediately.
Previously, the code to emit optimized code for these operations
was only used at initial SelectionDAG construction time; now it is
used at all times. This fixes some cases where rep;movs was being
used for small copies where simple loads/stores would be better.
This also cleans up code that checks for alignments less than 4;
let the targets make that decision instead of doing it in
target-independent code. This allows x86 to use rep;movs in
low-alignment cases.
Also, this fixes a bug that resulted in the use of rep;stos for
memsets of 0 with non-constant memory size when the alignment was
at least 4. It's better to use the library in this case, which
can be significantly faster when the size is large.
This also preserves more SourceValue information when memory
intrinsics are lowered into simple loads/stores.
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